晶圆级封装结构及其制造方法
申请公布号:TW200733318
申请号:TW095143570
申请日期:2006.11.24
申请公布日期:2007.09.01
发明人:奥户崇史;铃木裕二;竹川宜志;马场彻;后藤浩嗣;宫岛久和;片冈万士;西条隆司
分类号:H01L23/28(2006.01);H01L23/02(2006.01);H01L21/56(2006.01);B81C1/00(2006.01)
主分类号:H01L23/28(2006.01)
代理人:王云平
地址:日本
摘要:本发明可提供一种形成有复数个感测特性之误差较少的小型感测装置之晶圆级封装结构及其制造方法。该晶圆级封装结构,包含有:具有复数个感测单元之半导体晶圆、及接合于半导体晶圆表面之封装晶圆;半导体晶圆具有形成于各个感测单元之第一金属层;封装晶圆系在与第一金属层对向之位置具有接合金属层。半导体晶圆与封装晶圆之间的接合部,系藉由在常温下将第一金属层之活性化表面与接合金属层之活性化表面间直接接合所形成,所以,可防止因接合部之残留应力而于感测特性上产生误差。
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