具有多通道装置结构之多操作模式电晶体
申请公布号:TW200733247
申请号:TW095143904
申请日期:2006.11.28
申请公布日期:2007.09.01
发明人:潘南西;潘尔林 约翰
分类号:H01L21/336(2006.01);H01L29/78(2006.01)
主分类号:H01L21/336(2006.01)
代理人:洪武雄;陈昭诚
地址:美国
摘要:本发明提供一种多操作模式电晶体,其中利用具有不同的个别操作特征之多个通道。多个通道具有可独立调整之临界电压(threshold voltage)。该临界电压之独立调整包括提供以下之至少一者:于不同的通道中之不同的个别掺杂浓度、用于分隔开该通道之不同的闸极介电质之不同的个别闸极介电质厚度、以及用于该不同的通道之不同的个别矽通道厚度。
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