PRODUCTION OF SINGLE CRYSTAL,申请号JP19850257326-传众专利搜索

PRODUCTION OF SINGLE CRYSTAL

申请公布号：JPS62119197(A)

申请号：JP19850257326

申请日期：1985.11.15

申请公布日期：1987.05.30

申请人：

SUMITOMO ELECTRIC IND LTD

发明人：TADA KOJI;TATSUMI MASAMI;SAWADA SHINICHI

分类号：C30B27/02;H01L21/18;H01L21/208

主分类号：C30B27/02

摘要：PURPOSE:To grow the titled single crystal without any crystal defects by specifying the thickness of a liq. sealant and the temp. gradient in the axial direction when III-V and II-VI compd. semiconductor single crystals are grown by a liq.-capsule Czochralski method. CONSTITUTION:A seed crystal 4 is dipped in a raw material melt 2 covered with the liq. sealant 6 and pulled up while being rotated to form a single crystal 5 in a pressure vessel 7 filled with a high-pressure inert gas or gaseous N2. In this case, the thickness of the sealant 6 at the central part of the melt 2 before the growth of the single crystal 5 is adjusted to 2-8mm. The temp. gradient in the range from the surface of the sealant 6 to a position >=100mm higher than the surface is controlled to -20 deg.C/cm-0 deg.C/cm. Consequently, the escape of heat from the crystal to the sealant 6 by the horizontal heat conduction is reduced and the temp. gradient in the axial direction of the shaft 3 is also reduced in the vicinity of the center of the crystal. Accordingly, the thermal stress in the crystal is lowered and the number of defects generated in the crystal is decreased.