SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME,申请号US201615045298-传众专利搜索

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

申请公布号：US2016163880(A1)

申请号：US201615045298

申请日期：2016.02.17

申请公布日期：2016.06.09

申请人：

Semiconductor Energy Laboratory Co., Ltd.

发明人：OHNO Shinji;WATANABE Hirokazu;KUSUMOTO Naoto

分类号：H01L29/786;H01L21/425;H01L29/24

主分类号：H01L29/786

地址：Atsugi-shi JP

摘要：A transistor excellent in electrical characteristics and a method for manufacturing the transistor are provided. The transistor includes an oxide semiconductor layer including a source region, a drain region, and a channel formation region over an insulating surface; a gate insulating film over the oxide semiconductor layer; a gate electrode overlapping with the channel formation region, over the gate insulating film; a source electrode in contact with the source region; and a drain electrode in contact with the drain region. The source region and the drain region include a portion having higher oxygen concentration than the channel formation region.

主权项：1. A method for manufacturing a semiconductor device, comprising the steps of: forming an oxide semiconductor layer over an insulating surface; forming a gate insulating film over the oxide semiconductor layer; forming a gate electrode over the gate insulating film so as to overlap with the oxide semiconductor layer; and adding oxygen to a region which is in the oxide semiconductor layer and does not overlap with the gate electrode.