METHOD FOR FORMING SEMICONDUCTOR DEVICE WITH CONTACT PLUG AND METAL LINE AND SEMICONDUCTOR DEVICE MANUFACTURED THEREBY,申请号KR20000021667-传众专利搜索

METHOD FOR FORMING SEMICONDUCTOR DEVICE WITH CONTACT PLUG AND METAL LINE AND SEMICONDUCTOR DEVICE MANUFACTURED THEREBY

申请公布号：KR20010097520(A)

申请号：KR20000021667

申请日期：2000.04.24

申请公布日期：2001.11.08

申请人：

SAMSUNG ELECTRONICS CO., LTD.

发明人：JUN, YUN SU;LEE, GYU HYEON

分类号：H01L21/60;H01L21/768;H01L23/522;(IPC1-7):H01L21/768

主分类号：H01L21/60

摘要：<p>Embodiments of methods of fabricating protected contact plugs include forming an electrically insulating layer having a contact hole therein, on a semiconductor substrate and then forming an electrically conductive lower barrier layer that lines at least an upper portion of a sidewall of the contact hole. This lower barrier layer may comprise titanium nitride (TiN). A step is also performed to form an electrically conductive contact plug that extends in the contact hole, is electrically coupled to the lower barrier layer and protrudes above the electrically insulating layer. The contact plug may comprise tungsten (W). An electrically conductive upper barrier layer is then formed that extends on a protruded upper surface of the contact plug and on a surface of the lower barrier layer. A step may then be performed to pattern the upper barrier layer to define an electrically conductive barrier spacer that extends on a sidewall or end of the lower barrier layer and define an upper barrier layer cap on the protruded upper surface of the contact plug.</p>