METHOD FOR REMOVING POLYMER FORMED IN METAL ETCHING STEP,申请号KR19980015964-传众专利搜索

METHOD FOR REMOVING POLYMER FORMED IN METAL ETCHING STEP

申请公布号：KR100293918(B1)

申请号：KR19980015964

申请日期：1998.05.04

申请公布日期：2001.04.09

申请人：

HYUNDAI MICRO ELECTRONICS CO., LTD.

发明人：KIM, SE MIN

分类号：H01L21/3065;(IPC1-7):H01L21/306

主分类号：H01L21/3065

摘要：PURPOSE: A removal method of polymers is provided to improve a reliability of semiconductor devices by entirely softening polymers for easy removal of the polymers using H2O plasma. CONSTITUTION: A metal layer(3) made of a tungsten is formed on a substrate(1) having an insulation layer(2). A metal pattern is formed by selectively etching the metal layer(3) using a photoresist pattern as a mask and using an etching solution having a fluoric radical. At this time, polymers(5) are generated. The fluorine-contained polymers(5) adsorbed on the metal pattern are exposed to H2O plasma condition, thereby entirely softening and partially removing the polymers. Then, the photoresist pattern is removed by using wet-etching, thereby entirely removing the remaining polymers. The H2O plasma condition is formed in a photoresist removal chamber. A gas generated from the step of the exposure to H2O plasma condition is exhausted from the photoresist removal chamber to the outside.