METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT,申请号JP19980242654-传众专利搜索

METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT

申请公布号：JP2000077334(A)

申请号：JP19980242654

申请日期：1998.08.28

申请公布日期：2000.03.14

申请人：

SHARP CORP

发明人：TSUNODA ATSUISA;SUGAWARA AKIYOSHI

分类号：C30B29/42;H01L21/203;H01S5/00;H01S5/227;(IPC1-7):H01L21/203

主分类号：C30B29/42

摘要：PROBLEM TO BE SOLVED: To suppress the growth of a needle crystal by setting a V/III flux ratio to a specific number of times the upper-limit value of the V/III flux ratio where a crystal growth becomes rich in Ga when allowing the GaAs layer to grow again on a semiconductor substrate where an Al2O3 film is selectively formed. SOLUTION: After an Al2O3 film 11 is subjected to pattern machining in a stripe shape by photoetching using a resist film 12, the Al2O3 film 11 is etched to a mask. Then, a second conductive-type GaAs cap layer 10, a second conductive-type GaInP interlayer 9, a second conductive-type AlGaInP third clad layer 9 are selectively eliminated, and a ridge is formed directly below the Al2O3 film 11. After the resist film 12 is eliminated, the second MBE growth is made, and a first conductive-type GaAs current constriction layer 13 is manufactured at both sides of the ridge. The substrate temperature at this time reaches 520-620 deg.C, and the V/III flux ratio is set to at least three times larger than the upper-limit value of the V/III flux ratio where the crystal growth becomes rich in Ga.