SEMICONDUCTOR LIGHT EMITTING ELEMENT,申请号JP20160143540-传众专利搜索

SEMICONDUCTOR LIGHT EMITTING ELEMENT

申请公布号：JP2016195275(A)

申请号：JP20160143540

申请日期：2016.07.21

申请公布日期：2016.11.17

申请人：

NICHIA CHEM IND LTD

发明人：KAGEYAMA HIROAKI;SUDA TAKAMASA

分类号：H01L33/38;H01L33/40

主分类号：H01L33/38

摘要：PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which inhibits diffusion of Al to improve an optical output despite utilizing a cover electrode structure using Al.SOLUTION: A semiconductor light emitting element comprises: an Ag-containing first electrode structure 20; and a second electrode structure 30 arranged on a top face and a lateral face of the first electrode structure 20. The second electrode structure 30 is composed of metal consisting chiefly of Al and the second electrode structure 30 is formed in a manner such that a thickness of a film covering the lateral face of the first electrode structure 20 is thicker than a thickness of a film covering the top face. This can improve light extraction efficiency despite preventing diffusion of Al. In the first electrode structure 20, an Ni layer and a Ti layer are sequentially laminated between an Ag-containing layer 24 and an Ru layer 22. Further, the second electrode structure 30 is composed of Al.SELECTED DRAWING: Figure 2