IMPROVED ION-IMPLANTED GaAs DEVICES
申请公布号:WO1989000336(A1)
申请号:GB1988000497
申请日期:1988.06.27
申请公布日期:1989.01.12
摘要:<p>The invention provides a means of improving the threshold voltage uniformity of ion-implanted GaAs MESFETs by using co-implantation of two dopant species rather than the normal situation where only one dopant species is used. The two dopant species are chosen so that the effects on activation of stoichiometric changes in the substrate are in opposite senses - thus stoichiometric effects on total activation (and thus on threshold voltage of devices) are reduced or eliminated.</p>
DEVICE FOR MANUFACTURING PRESS POTS
MEDIUM-VOLTAGE OR HIGH-VOLTAGE SWITCHGEAR ASSEMBLY
METHOD AND APPARATUS FOR WEIGHING PRODUCTS
HOLDING DEVICE FOR A POSTER-SHAPED INFORMATION SUPPORT
ASSEMBLY FOR ROTATING A CUTTING INSERT DURING A TURNING OPERATION AND INSERTS USED THEREIN
DIFFERENTIAL BRAKING ALERT SYSTEM AND METHOD
MEASUREMENT APPARATUS AND METHOD
DRY COMPOSITE FOR INDOOR SKIN, PRODUCTION AND USE THEREOF
DOSE REDUCTION OF A CANNABINOID CB1 RECEPTOR ANTAGONIST IN THE TREATMENT OF OVERWEIGHT OR OBESITY
ANTIBACTERIAL CONDENSED THIAZOLES
FLOATING CARRIER FOR OIL PRODUCTION, WITH ICE-SHELF DESTRUCTION DEVICES, AND ASSOCIATED METHOD