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METHOD OF MANUFACTURING LIGHT EMITTING DIODE

申请公布号:US2017062675(A1)

申请号:US201615219454

申请日期:2016.07.26

申请公布日期:2017.03.02

申请人:
SAMSUNG ELECTRONICS CO., LTD.

发明人:Lim Jin-young;Sakong Tan;Sim Eun-deok;Yoon Suk-ho;Lee Jeong-wook

分类号:H01L33/58;H01L33/00;H01L33/32;H01L33/16;H01L33/44

主分类号:H01L33/58

地址:Suwon-si KR

摘要:A method of manufacturing a light emitting diode (LED) includes forming a first material layer on a substrate, forming a second material layer on the first material layer, forming a photomask pattern on the second material layer, performing a first etching on the second material layer and a portion of the first material layer by using the photomask pattern as an etch mask, removing the photomask pattern, and forming a plurality of isolated structures by performing a second etching on the remaining portion of the first material layer until a top surface of the substrate is exposed.

主权项:1. A method of manufacturing a light emitting diode (LED), the method comprising: forming a first material layer on a substrate; forming a second material layer on the first material layer; forming a photomask pattern on the second material layer; performing a first etching on the second material layer and a portion of the first material layer by using the photomask pattern as an etch mask; removing the photomask pattern; and forming a plurality of isolated structures, by performing a second etching on a remaining portion of the first material layer until a top surface of the substrate is exposed.

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