半導体材料ウェハを研磨するための方法,申请号JP20140054822-传众专利搜索

半導体材料ウェハを研磨するための方法

申请公布号：JP5853041(B2)

申请号：JP20140054822

申请日期：2014.03.18

申请公布日期：2016.02.09

申请人：

ジルトロニックアクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃＡＧ

发明人：ユルゲン・シュバントナー

分类号：B24B37/24;B24B9/00;B24B37/00;B24B37/015;H01L21/304

主分类号：B24B37/24

摘要：A method for polishing at least one semiconductor wafer while supplying a polishing agent includes performing a first simultaneous double-side polishing of the front side and the back side of the at least one semiconductor wafer with first upper and lower polishing pads, edge-notch polishing the surface of the at least one semiconductor wafer, performing a second simultaneous double-side polishing of the front side and the back side of the at least on semiconductor wafer with second upper and lower polishing pads, where the upper and lower polishing pads for the first simultaneous double-side polishing are harder and less compressible than the upper and lower polishing pads for the second simultaneous double-side polishing and performing single-side polishing of the front side of the at least one semiconductor wafer.