METHOD OF FABRICATING DUAL POLY-GATE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME,申请号KR20110013475-传众专利搜索

METHOD OF FABRICATING DUAL POLY-GATE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME

申请公布号：KR101163224(B1)

申请号：KR20110013475

申请日期：2011.02.15

申请公布日期：2012.07.06

申请人：

SK HYNIX INC.

发明人：ROUH, KYONG BONG;EUN, YONG SEOK

分类号：H01L21/336;H01L29/78

主分类号：H01L21/336

摘要：<p>PURPOSE: A method of fabricating a dual poly-gate and a method of fabricating a semiconductor device using the same are provided to obtain the properties of a p-type polygate and a n-type polygate while reducing manufacturing costs and the number of processing steps by using only a single piece of a photomask. CONSTITUTION: A polysilicon layer is formed on a substrate(110) having a first region(101) and a second region(102). A mask layer pattern is formed to expose the polysilicon layer from the second region. The impurity doping of the second conductive type is performed for the polysilicon layer on the second region exposed by the mask layer pattern. The mask layer pattern is removed. A first poly silicon layer pattern(133) of the first region and a second poly silicon layer pattern(134) of the second region are formed by patterning the polysilicon layer.</p>