FinFET AND TRANSISTORS WITH RESISTORS AND PROTECTION AGAINST ELECTROSTATIC DISCHARGE (ESD),申请号US201514746893-传众专利搜索

FinFET AND TRANSISTORS WITH RESISTORS AND PROTECTION AGAINST ELECTROSTATIC DISCHARGE (ESD)

申请公布号：US2015294968(A1)

申请号：US201514746893

申请日期：2015.06.23

申请公布日期：2015.10.15

申请人：

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人：YANG Tzu-Yi;CHEN Kuo-Ji;LEE Chien-Yuan

分类号：H01L27/02;H01L29/78;H01L49/02;H01L27/06;H01L23/528

主分类号：H01L27/02

地址：Hsin-Chu TW

摘要：A FinFET device includes a plurality of FinFET devices formed on a corresponding plurality of fins in a multilevel interconnect semiconductor device. Each source and each drain is coupled to a metal interconnect level by a metal resistive element that is subjacent the lowermost interconnect level. In one embodiment, a metal segment extending over a plurality of the fins includes contacts to each of the fins, thereby providing subjacent metal resistive elements of different lengths. The plurality of fins and subjacent metal segments are arranged such that each of the FinFET devices has the same total resistance provided by the source and drain metal resistive elements, even though the source metal resistive element and drain metal resistive element associated with the fins may have different lengths. The arrangement provides the same turn-on resistance and the same ESD failure current for each FinFET device.

主权项：1. A semiconductor device, comprising: a plurality of FinFET devices formed in a semiconductor device having a plurality of interconnect levels and including a lowermost interconnect level, each of said FinFET devices having an associated fin, a gate, and opposed source and drain regions, each of said opposed source and drain regions coupled to one or more resistive elements that are subjacent said lowermost interconnect level, and wherein said one or more resistive elements are arranged such that a total resistance is the same for each FinFET device in said plurality of FinFET devices.