Semiconductor device and manufacturing method thereof,申请号US201213601400-传众专利搜索

Semiconductor device and manufacturing method thereof

申请公布号：US8680612(B2)

申请号：US201213601400

申请日期：2012.08.31

申请公布日期：2014.03.25

申请人：

IZUMIDA TAKASHI;AOKI NOBUTOSHI;KABUSHIKI KAISHA TOSHIBA

发明人：IZUMIDA TAKASHI;AOKI NOBUTOSHI

分类号：H01L29/10;H01L29/423;H01L29/78

主分类号：H01L29/10

摘要：According to one embodiment, a semiconductor device includes an element region partitioned by an isolation region in a semiconductor substrate, and a source region and a drain region formed in a surface layer of the element region by being isolated by a gate trench along a predetermined direction across the element region. The semiconductor device includes a gate electrode formed to reach a position deeper than the source region and the drain region by embedding at least part thereof in the gate trench with a gate dielectric film interposed therebetween. An interface in the drain region, which is in contact with the gate dielectric film, includes a projection projecting toward the gate electrode side.