IN-SITU CARBON AND OXIDE DOPING OF ATOMIC LAYER DEPOSITION SILICON NITRIDE FILMS,申请号US201514616206-传众专利搜索

IN-SITU CARBON AND OXIDE DOPING OF ATOMIC LAYER DEPOSITION SILICON NITRIDE FILMS

申请公布号：US2015252477(A1)

申请号：US201514616206

申请日期：2015.02.06

申请公布日期：2015.09.10

申请人：

Applied Materials, Inc.

发明人：NGUYEN Victor;BALSEANU Mihaela;LI Ning;MARCUS Steven D.;SALY Mark;THOMPSON David;XIA Li-Qun

分类号：C23C16/455;C23C16/458;C23C16/34;C23C16/24;C23C16/50

主分类号：C23C16/455

地址：Santa Clara CA US

摘要：Embodiments disclosed herein generally relate to the processing of substrates, and more particularly, relate to methods for forming a dielectric film. In one embodiment, the method includes placing a plurality of substrates inside a processing chamber and performing a sequence of exposing the substrates to a first reactive gas comprising silicon, and then exposing the substrates to a plasma of a second reactive gas comprising nitrogen and at least one of oxygen or carbon, and repeating the sequence to form the dielectric film comprising silicon carbon nitride or silicon carbon oxynitride on each of the substrates.

主权项：1. A method for forming a dielectric film, comprising: placing a plurality of substrates inside a processing chamber; performing a sequence of: exposing the substrates to a first reactive gas comprising silicon; and thenexposing the substrates to a plasma of a second reactive gas comprising nitrogen and at least one of oxygen or carbon; and repeating the sequence to form the dielectric film comprising silicon carbon nitride or silicon carbon oxynitride on each of the substrates.