SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME,申请号US201214395444-传众专利搜索

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

申请公布号：US2015170915(A1)

申请号：US201214395444

申请日期：2012.09.21

申请公布日期：2015.06.18

申请人：

Institute of Microelectronics, Chinese Academy of Sciences

发明人：Bi Jinshun;Luo Jiajun;Han Zhengsheng

分类号：H01L21/02;H01L21/84;H01L29/10;H01L21/033;H01L29/423;H01L29/06;H01L21/266;H01L21/265

主分类号：H01L21/02

地址：Beijing CN

摘要：The present invention provides a method for manufacturing a semiconductor structure, which is characterized in comprising following steps: providing an SOI substrate for forming a semiconductor structure; the SOI substrate comprises a monocrystalline silicon top layer, a buried oxide layer and a support substrate; and forming an amorphous region outside the area for forming a channel region of the semiconductor structure in the monocrystalline silicon top layer. The method provided by the present invention can effectively improve reliability of a gate dielectric layer formed on the SOI substrate.

主权项：1. A method for manufacturing a semiconductor structure comprises: a) providing an SOI substrate for forming a semiconductor structure; the SOI substrate comprises a monocrystalline silicon top layer, a buried oxide layer and a support substrate; b) forming an amorphous region outside the area for forming a channel regions of a semiconductor structure in the monocrystalline silicon top layer.