Semiconductor device,申请号US201414253269-传众专利搜索

Semiconductor device

申请公布号：US9048111(B2)

申请号：US201414253269

申请日期：2014.04.15

申请公布日期：2015.06.02

申请人：

Mitsubishi Electric Corporation

发明人：Yamashita Junichi;Terashima Tomohide

分类号：H01L29/06;H01L21/762;H01L27/12

主分类号：H01L29/06

代理机构：

Studebaker & Brackett PC

代理人：Studebaker & Brackett PC

地址：Tokyo JP

摘要：A semiconductor device includes a substrate, a buried insulating film formed on the substrate, an SOI layer formed on the buried insulating film, an insulating film formed to extend from a top surface of the SOI layer to the buried insulating film and to divide the SOI layer into a first SOI layer and a second SOI layer isolated from the first SOI layer, an element formed in the first SOI layer, and an electrode having at one end thereof a pad located directly above the second SOI layer, the other end of the electrode being connected to the first SOI layer. A cavity region is formed between the buried insulating film and the substrate directly below the first SOI layer. The portion of the buried insulating film directly below the second SOI layer is at least partially in direct contact with the substrate.

主权项：1. A semiconductor device comprising: a substrate; a buried insulating film formed on said substrate; an SOI layer formed on said buried insulating film; an insulating film formed to extend from a top surface of said SOI layer to said buried insulating film and to divide said SOI layer into a first SOI layer and a second SOI layer isolated from said first SOI layer; an element formed in said first SOI layer; and an electrode having at one end thereof a pad located directly above said second SOI layer, the other end of said electrode being connected to said first SOI layer; wherein a cavity region is formed between said buried insulating film and said substrate directly below said first SOI layer; and wherein the portion of said buried insulating film directly below said second SOI layer is at least partially in direct contact with said substrate.