SEMICONDUCTOR MEMORY DEVICE,申请号JP20130061332-传众专利搜索

SEMICONDUCTOR MEMORY DEVICE

申请公布号：JP2014186783(A)

申请号：JP20130061332

申请日期：2013.03.25

申请公布日期：2014.10.02

申请人：

TOSHIBA CORP

发明人：FUJIMURA TOMOFUMI

分类号：G11C16/06;G11C16/02

主分类号：G11C16/06

摘要：<p>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of shortening the time for reading flag data.SOLUTION: A first memory cell stores first data. A second memory cell stores second data indicating the write state of the first data. A word line is electrically connected to a gate of the first memory cell and a gate of the second memory cell. A first bit line reads the first data from the first memory cell. A second bit line reads the second data from the second memory cell. A first sense amplifier reads the first data from the first memory cell via the first bit line. A second sense amplifier reads the second data from the second memory cell via the second bit line. An accumulator temporarily stores the first data and second data. A first bus line transfers the first data from the first sense amplifier to the accumulator. A second bus line transfers the second data from the second sense amplifier to the accumulator.</p>