SEMICONDUCTOR DEVICE,申请号JP20120170280-传众专利搜索

SEMICONDUCTOR DEVICE

申请公布号：JP2014029951(A)

申请号：JP20120170280

申请日期：2012.07.31

申请公布日期：2014.02.13

申请人：

TOSHIBA CORP

发明人：IIJIMA RYOSUKE;NAKABAYASHI YUKIO;SHINOHE TAKASHI

分类号：H01L21/8238;H01L21/336;H01L27/092;H01L29/78

主分类号：H01L21/8238

摘要：PROBLEM TO BE SOLVED: To provide a semiconductor device using SiC with further improved characteristics.SOLUTION: A semiconductor device comprises a first transistor Tr1 and a second transistor Tr2 provided in a silicon carbide region. The silicon carbide region comprises: a first crystal plane 100a; and a second crystal plane 100b having a different plane direction from the first crystal plane. The first transistor has a first region 11 of a first conductivity type, a second region 12 of the first conductivity type, and a third region 13 of a second conductivity type provided between the first region and second region. The second transistor has a fourth region 21 of the second conductivity type, fifth region 22 of the second conductivity type, and a sixth region 23 of the first conductivity type provided between the fourth region and the fifth region. The first region, the second region, and the third region are disposed along the first crystal plane 100a. The fourth region, the fifth region, and the sixth region are disposed along the second crystal plane 100b.