HIGH VOLTAGE DEVICE AND MANUFACTURING METHOD THEREOF

申请公布号：US2013270634(A1)

申请号：US201213445151

申请日期：2012.04.12

申请公布日期：2013.10.17

申请人：

HUANG TSUNG-YI;CHIU CHIEN-WEI;RICHTEK TECHNOLOGY CORPORATION

发明人：HUANG TSUNG-YI;CHIU CHIEN-WEI

分类号：H01L29/78;H01L21/336

主分类号：H01L29/78

摘要：The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device is formed in a first conductive type substrate. A low voltage device is also formed in the substrate. The high voltage device includes a drift region, a gate, a source, a drain, and a mitigation region. The mitigation region has a second conductive type, and is formed in the drift region between the gate and drain. The mitigation region is formed by a process step which also forms a lightly doped drain (LDD) region in the low voltage device.

左右护板总成(2)

分体壁挂式空调器室内机（108）

除湿机面板（K-87）

除湿机面板（K-86）

分体壁挂式空调器室内机（104）

分体壁挂式空调器室内机（103）

机床工作灯(MY002)

切管机（SQ系列）

平板电脑（K10）

包装盒(永达鸡肉卷)

LED灯具控制器（智能型）

直流接触器

汽车排气管(RII)

三斗柜(HT-45)

床(3G017-F)

床(3D567)

桌(FTS00791)

灯（QP-21）

门(青花韵系列II)

布(2011007)