GROUP-III NITRIDE SEMICONDUCTOR LASER AND METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LASER,申请号JP20120014463-传众专利搜索

GROUP-III NITRIDE SEMICONDUCTOR LASER AND METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LASER

申请公布号：JP2013157350(A)

申请号：JP20120014463

申请日期：2012.01.26

申请公布日期：2013.08.15

申请人：

SUMITOMO ELECTRIC IND LTD

发明人：TOKUYAMA SHINJI;KYONO TAKASHI;ADACHI MASAHIRO;KATAYAMA KOJI;SAGA NORIHIRO

分类号：H01S5/042;H01S5/343

主分类号：H01S5/042

摘要：PROBLEM TO BE SOLVED: To provide a group-III nitride semiconductor laser element having a low-resistance cathod on a substrate rear surface inclined with respect to a nitrogen plane crossing a reference axis extending in the <000-1> axis of a group III nitride semiconductor of a substrate.SOLUTION: When a rear surface of an n-type semiconductor substrate is a flat plane extending along a reference plane inclined with respect to a nitrogen plane, a crystal plane constituting the rear surface exhibits high chemical reactivity compared to the {000-1} plane. Although the substrate rear surface forms excellent junction to a metallic material of an electrode, in the atmosphere, reaction of constituent elements of the substrate rear surface 17b and oxygen also tends to occur. On the other hand, when the substrate rear surface 17b has a non-flat structure 18 composed of some crystal planes including the {000-1} plane, although the electrical contacts among each of crystal planes 18a to 18d and a cathod electrode 15 are individually different from one another, the electrical contact of the entire rear surface exhibits low electrical resistance owing to the non-flat structure 18. The cathod electrode 15 is a non-alloy electrode.