SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

申请公布号：JP2013110401(A)

申请号：JP20120236338

申请日期：2012.10.26

申请公布日期：2013.06.06

申请人：

SEMICONDUCTOR ENERGY LAB CO LTD

发明人：YAMAZAKI SHUNPEI;TAKAHASHI MASAHIRO;NAKAJIMA MOTOI;SHIMAZU TAKASHI

分类号：H01L29/786;H01L21/8242;H01L27/108;H01L51/50

主分类号：H01L29/786

摘要：<P>PROBLEM TO BE SOLVED: To provide a material suitable for semiconductor applications such as a transistor and a diode. <P>SOLUTION: The material is an oxide material including In, M1, M2 and Zn, in which M1 is a group 13 element, typically Ga, and M2 is an element whose content is less than the content of M1. Examples of M2 are Ti, Zr, Hf, Ge, Sn, and the like. Containing M2 can suppress generation of oxygen vacancies in the oxide semiconductor material. If a transistor is realized which hardly contains oxygen vacancies, reliability of a semiconductor device can be increased. <P>COPYRIGHT: (C)2013,JPO&INPIT

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