,申请号JP20120541078-传众专利搜索

申请公布号：JP2013512567(A)

申请号：JP20120541078

申请日期：2010.10.01

申请公布日期：2013.04.11

分类号：H01L33/24;H01L21/205;H01L21/302;H01L21/306;H01L33/32

主分类号：H01L33/24

摘要：<p>A light emitting device and method for making the same is disclosed. The light-emitting device includes an active layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer. The active layer emits light when holes from the p-type semiconductor layer combine with electrons from the n-type semiconductor layer therein. The active layer includes a number of sub-layers and has a plurality of pits in which the side surfaces of a plurality of the sub-layers are in contact with the p-type semiconductor material such that holes from the p-type semiconductor material are injected into those sub-layers through the exposed side surfaces without passing through another sub-layer. The pits can be formed by utilizing dislocations in the n-type semiconductor layer and etching the active layer using an etching atmosphere in the same chamber used to deposit the semiconductor layers without removing the partially fabricated device.</p>