BRIDGE DIODE FOR LED LIGHTING APPARATUS,申请号KR20100134428-传众专利搜索

BRIDGE DIODE FOR LED LIGHTING APPARATUS

申请公布号：KR20120072592(A)

申请号：KR20100134428

申请日期：2010.12.24

申请公布日期：2012.07.04

申请人：

INNOVISION CO., LTD.

发明人：PARK, SOUNG HWI

分类号：H05B37/02;H02M7/06

主分类号：H05B37/02

摘要：PURPOSE: A bridge diode of an LED lighting apparatus is provided to ensure the minimum size because a part of the bridge diode formed in the same substrate a semiconductor device for driving an LED and the rest formed as a separate external device are assembled into a single package. CONSTITUTION: A first N-type layer(32A) and a second N-type layer(32B) are formed on two sides of the top of a P-type silicon substrate(31). An insulating layer(33) is formed in the whole surfaces except for the open surfaces of the P-type silicon substrate and the first and second N-type layers. A metal electrode(34) is formed on the top of the insulating layer. A first P-type layer(36A) and a second P-type layer(36B) are formed on the top of an N-type silicon substrate(35). The metal electrode and the N-type silicon substrate are attached using a conductive epoxy adhesive(37). The first N-type layer and the first P-type layer are bonded to a first bonding pad(39A) through respective bonding wires(38). The second N-type layer and the second P-type layer are bonded to a first bonding pad(39B) through respective bonding wires.