自我接合磊晶的方法
申请公布号:TWI364854
申请号:TW096136499
申请日期:2007.09.29
申请公布日期:2012.05.21
发明人:刘育全;林宏诚;许文杰;李家铭;富振华
分类号:H01L33/00
主分类号:H01L33/00
代理人:黄志扬 台北市中山区长安东路1段23号10楼之1
地址:南投县南投市自强三路18号
摘要:一种自我接合磊晶的方法,系在半导体发光元件的基板表面形成钝化层,并蚀刻出形成凹部及上方具有该钝化层的凸部,然后于凹部的底面开始磊晶,该磊晶层会先填满该些凹部,然后再覆盖该些凸部且开始自我接合向上磊晶完成该磊晶层结构。藉由自我接合磊晶成长技术可以避免磊晶参数误差所导致孔洞的产生,降低缺陷密度,提高磊晶层的品质,进而提升内部量子效率。
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