Formation of TSV backside interconnects by modifying carrier wafers,申请号US20100751512-传众专利搜索

Formation of TSV backside interconnects by modifying carrier wafers

申请公布号：US8158489(B2)

申请号：US20100751512

申请日期：2010.03.31

申请公布日期：2012.04.17

申请人：

HUANG HON-LIN;HSIAO CHING-WEN;HSU KUO-CHING;CHEN CHEN-SHIEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人：HUANG HON-LIN;HSIAO CHING-WEN;HSU KUO-CHING;CHEN CHEN-SHIEN

分类号：H01L21/30

主分类号：H01L21/30

摘要：An integrated circuit structure includes a semiconductor wafer, which includes a first notch extending from an edge of the semiconductor wafer into the semiconductor wafer. A carrier wafer is mounted onto the semiconductor wafer. The carrier wafer has a second notch overlapping at least a portion of the first notch. A side of the carrier wafer facing the semiconductor wafer forms a sharp angle with an edge of the carrier wafer. The carrier wafer has a resistivity lower than about 1×108 Ohm-cm.