POST-SEED DEPOSITION PROCESS,申请号KR20097018804-传众专利搜索

POST-SEED DEPOSITION PROCESS

申请公布号：KR101118798(B1)

申请号：KR20097018804

申请日期：2008.02.14

申请公布日期：2012.03.21

分类号：H01L21/768;H01L23/48

主分类号：H01L21/768

摘要：A method involves pattern etching a photoresist that is located on a wafer that contains a deposited seed layer to expose portions of the seed layer, plating the wafer so that plating metal builds up on only the exposed seed layer until the plating metal has reached an elevation above the seed layer that is at least equal to a thickness of the seed layer, removing the solid photoresist, and removing seed layer exposed by removal of the photoresist and plated metal until all of the exposed seed layer has been removed.