NON-VOLATILE MEMORY DEVICE, ERASING METHOD THEREOF, AND MEMORY SYSTEM INCLUDING THE SAME
申请公布号:JP2011187152(A)
申请号:JP20110040551
申请日期:2011.02.25
申请公布日期:2011.09.22
发明人:HAN JINMAN;KIM DOO-GON
分类号:G11C16/02;G11C16/04;G11C16/06;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792
主分类号:G11C16/02
摘要:<P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory the reliability of which has been improved, and its erasing method, and to provide a memory system incorporating the memory. <P>SOLUTION: An erasing method of a nonvolatile memory includes a step of applying a word line erasing voltage to each of a number of word lines, respectively connected to the memory cells; a step of applying a specific voltage to the ground selection line connected to the ground selection transistor, a step of applying the erasing voltage to the substrate where the memory string is formed during the step of applying a specific voltage to the ground selection line, and a step of floating the ground selection line as the substrate voltage changes. <P>COPYRIGHT: (C)2011,JPO&INPIT
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