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Sidewall graphene devices for 3-D electronics

申请公布号:US7993986(B2)

申请号:US20080202011

申请日期:2008.08.29

申请公布日期:2011.08.09

申请人:
ADVANCED MICRO DEVICES, INC.

发明人:CHEN AN;KRIVOKAPIC ZORAN

分类号:H01L21/335

主分类号:H01L21/335

摘要:A device is provided that includes a structure having a sidewall surface, a layer of material provided on the sidewall surface, and a device structure provided in contact with the layer of material. Fabrication techniques includes a process that includes forming a structure having a sidewall surface, forming a layer of material on the sidewall surface, and forming a device structure in contact with the layer of material, where the device structure and the layer of material are components of a device.

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