Sidewall graphene devices for 3-D electronics
申请公布号:US7993986(B2)
申请号:US20080202011
申请日期:2008.08.29
申请公布日期:2011.08.09
发明人:CHEN AN;KRIVOKAPIC ZORAN
分类号:H01L21/335
主分类号:H01L21/335
摘要:A device is provided that includes a structure having a sidewall surface, a layer of material provided on the sidewall surface, and a device structure provided in contact with the layer of material. Fabrication techniques includes a process that includes forming a structure having a sidewall surface, forming a layer of material on the sidewall surface, and forming a device structure in contact with the layer of material, where the device structure and the layer of material are components of a device.