SEMICONDUCTOR DEVICE

申请公布号：US2011122670(A1)

申请号：US20100947846

申请日期：2010.11.17

申请公布日期：2011.05.26

申请人：

SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人：YAMAZAKI SHUNPEI;KOYAMA JUN;KATO KIYOSHI

分类号：G11C5/06

主分类号：G11C5/06

摘要：An object of the present invention is to provide a semiconductor device combining transistors integrating on a same substrate transistors including an oxide semiconductor in their channel formation region and transistors including non-oxide semiconductor in their channel formation region. An application of the present invention is to realize substantially non-volatile semiconductor memories which do not require specific erasing operation and do not suffer from damages due to repeated writing operation. Furthermore, the semiconductor device is well adapted to store multivalued data. Manufacturing methods, application circuits and driving/reading methods are explained in details in the description.

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