High density spin-transfer torque MRAM process,申请号US20080290495-传众专利搜索

High density spin-transfer torque MRAM process

申请公布号：US7884433(B2)

申请号：US20080290495

申请日期：2008.10.31

申请公布日期：2011.02.08

申请人：

MAGIC TECHNOLOGIES, INC.

发明人：ZHONG TOM;TORNG CHYU-JIUH;XIAO RONGFU;ZHONG ADAM;KAN WAI-MING JOHNSON;LIU DANIEL

分类号：H01L29/82

主分类号：H01L29/82

摘要：A STT-MRAM integration scheme is disclosed wherein the connection between a MTJ and CMOS metal is simplified by forming an intermediate via contact (VAC) on a CMOS landing pad, a metal (VAM) pad that contacts and covers the VAC, and a MTJ on the VAM. A dual damascene process is performed to connect BIT line metal to CMOS landing pads through VAC/VAM/MTJ stacks in a device region, and to connect BIT line connection pads to CMOS connection pads through BIT connection vias outside the device region. The VAM pad is a single layer or composite made of Ta, TaN, or other conductors which serves as a diffusion barrier, has a highly smooth surface for MTJ formation, and provides excellent selectivity with refill dielectric materials during a chemical mechanical polish process. Each VAC is from 500 to 3000 Angstroms thick to minimize additional circuit resistance and minimize etch burden.