Methods of forming a pattern using negative-type photoresist compositions,申请号US20100662076-传众专利搜索

Methods of forming a pattern using negative-type photoresist compositions

申请公布号：US2010248134(A1)

申请号：US20100662076

申请日期：2010.03.30

申请公布日期：2010.09.30

申请人：

KIM KYOUNG-MI;KIM JIN-BAEK;PARK JI-YOUNG;KIM YOUNG-HO

发明人：KIM KYOUNG-MI;KIM JIN-BAEK;PARK JI-YOUNG;KIM YOUNG-HO

分类号：G03F7/20;G03F7/004

主分类号：G03F7/20

摘要：A method of forming a pattern and a negative-type photoresist composition, the method including forming a photoresist film on a substrate by coating a photoresist composition thereon, the photoresist composition including a polymer, a photoacid generator, and a solvent, wherein the polymer includes an alkoxysilyl group as a side chain and is cross-linkable by an acid to be insoluble in a developer; curing a first portion of the photoresist film by exposing the first portion to light, the exposed first portion being cured by a cross-linking reaction of the alkoxysilyl groups therein; and providing a developer to the photoresist film to remove a second portion of the photoresist film that is not exposed to light, thereby forming a photoresist pattern on the substrate.