SEMICONDUCTOR HETEROSTRUCTURE THERMOELECTRIC DEVICE,申请号WO2009US32447-传众专利搜索

SEMICONDUCTOR HETEROSTRUCTURE THERMOELECTRIC DEVICE

申请公布号：WO2010087832(A1)

申请号：WO2009US32447

申请日期：2009.01.29

申请公布日期：2010.08.05

申请人：

HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.;BRATKOVSKI, ALEXANDRE M.;TSYBESKOV, LEONID

发明人：BRATKOVSKI, ALEXANDRE M.;TSYBESKOV, LEONID

分类号：H01L35/00;H01L35/02

主分类号：H01L35/00

摘要：<p>A semiconductor heterostructure thermoelectric device (101). The semiconductor heterostructure thermoelectric device (101) includes at least one thermoelectric heterostructure unit (110). The thermoelectric heterostructure unit (110) includes a first portion (112) composed of a first semiconductor material and a second portion (114 ) composed of a second semiconductor material that forms a heterojunction (116) with the first portion (112). The first semiconductor material has a first electrical conductivity and a first thermal conductivity; and, the second semiconductor material has a second electrical conductivity and a second thermal conductivity. The second semiconductor material is disposed as at least one sub-micron patch (244d) of the second portion (114). In addition, the second semiconductor material includes an alloy of the first semiconductor material with an alloying constituent. The dimensionless figure of merit of performance for the semiconductor heterostructure thermoelectric device (101), defined by ZT, is greater than unity.</p>