Feedback structure for an SRAM cell,申请号US20080969589-传众专利搜索

Feedback structure for an SRAM cell

申请公布号：US7768820(B2)

申请号：US20080969589

申请日期：2008.01.04

申请公布日期：2010.08.03

申请人：

TEXAS INSTRUMENTS INCORPORATED

发明人：HOUSTON THEODORE W.;TIGELAAR HOWARD L.

分类号：G11C11/00

主分类号：G11C11/00

摘要：Embodiments of the present disclosure provide a feedback structure, a method of constructing a feedback structure and an integrated circuit employing the feedback structure. In one embodiment, the feedback structure is for use with an integrated circuit and includes a local interconnect configured to electrically connect an output of a CMOS inverter to another circuit in the integrated circuit. Additionally, the feedback structure also includes an interconnect extension to the local interconnect configured to proximately extend along a gate structure of the CMOS inverter to provide a reactive coupling between the output and the gate structure.