METHODS FOR FORMING NANODOTS AND/OR A PATTERNED MATERIAL DURING THE FORMATION OF A SEMICONDUCTOR DEVICE,申请号US20100705704-传众专利搜索

METHODS FOR FORMING NANODOTS AND/OR A PATTERNED MATERIAL DURING THE FORMATION OF A SEMICONDUCTOR DEVICE

申请公布号：US2010144132(A1)

申请号：US20100705704

申请日期：2010.02.15

申请公布日期：2010.06.10

申请人：

SUBRAMANIAN KRUPAKAR M;ABATCHEV MIRZAFER

发明人：SUBRAMANIAN KRUPAKAR M.;ABATCHEV MIRZAFER

分类号：H01L21/3205;C23F1/00

主分类号：H01L21/3205

摘要：Methods for forming nanodots and/or a patterned material are provided. One such method involves forming a first patterning material over a base. Blades of a nanoimprint lithography template are placed within the first patterning material, wherein the blades extend along the base in a first direction. With the blades within the first patterning material, the first patterning material are cured. The blades are removed from the first patterning material to form a patterned first patterning material. The base is etched using the patterned first patterning material as a pattern to form openings in the base. The patterned first patterning material is removed from the base. A second patterning material is formed over the base and within the openings in the base. Blades of a nanoimprint lithography template are placed within the second patterning material, wherein the blades extend along the base in a second direction, which is generally perpendicular with respect to the first direction. With the blades within the second patterning material, the second patterning material is cured. The blades are removed from the second patterning material to form a patterned second patterning material. The base is etched using the patterned second patterning material as a pattern to form openings in the base. The patterned second patterning material is removed from the base.