FLOW QUANTITY CALCULATING TOOL, FLOW QUANTITY CALCULATION METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD,申请号JP20080133772-传众专利搜索

FLOW QUANTITY CALCULATING TOOL, FLOW QUANTITY CALCULATION METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

申请公布号：JP2009283641(A)

申请号：JP20080133772

申请日期：2008.05.22

申请公布日期：2009.12.03

申请人：

HITACHI KOKUSAI ELECTRIC INC

发明人：SASAKI TAKASHI;FUKUDA MASANAO

分类号：H01L21/31

主分类号：H01L21/31

摘要：PROBLEM TO BE SOLVED: To correct the loading effect not by the presence or absence of a circuit pattern or by its shape, but only by one-time film formation testing, and per 25 sheets of tested wafers or fewer, at a time. SOLUTION: The flux rate calculation tool has: an input section for containing a small number of substrates in a treatment chamber, supplying the same flux rates of first and second gases as at the film formation process from one end of the treatment chamber through a main nozzle, flowing them to the other end, and testing film formation on the small number of substrates, thus inputting film thickness values of the films formed on the substrates; an input section for inputting the value of at least the second gas flux rate supplied by the main nozzle at the film formation test time; a calculation section for calculating the value of the second gas flux rate supplied from each sub-nozzle, such that the thickness of the films formed on the multiple sheets of substrates at the film formation time become equivalent in a substrate arrangement direction; and an output section for outputting the values of flow rate calculated. COPYRIGHT: (C)2010,JPO&INPIT