SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME,申请号US20090360645-传众专利搜索

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

申请公布号：US2009194813(A1)

申请号：US20090360645

申请日期：2009.01.27

申请公布日期：2009.08.06

申请人：

ELPIDA MEMORY, INC.

发明人：FUJIMOTO HIROYUKI

分类号：H01L29/78;H01L21/336

主分类号：H01L29/78

摘要：The semiconductor device comprises a word line and a bit line. The word line comprises a gate electrode and a first metal interconnect. The first metal interconnect has contact with the gate electrode and extends into a region upper than a first impurity-diffused region in a first direction. The bit line comprises a connecting part and a second metal interconnect. The connecting part is formed so as to have contact with at least part of the side surface of the first impurity-diffused region. The second metal interconnect has contact with the connecting part and extends into a region lower than the semiconductor region in a second direction orthogonal to the first direction.