A METHOD OF GROWING SEMICONDUCTOR HETEROSTRUCTURES BASED ON GALLIUM NITRIDE,申请号KR20087019326-传众专利搜索

A METHOD OF GROWING SEMICONDUCTOR HETEROSTRUCTURES BASED ON GALLIUM NITRIDE

申请公布号：KR20090029685(A)

申请号：KR20087019326

申请日期：2007.02.06

申请公布日期：2009.03.23

申请人：

SEOUL SEMICONDUCTOR CO., LTD.;ABRAMOV VLADIMIR SEMENOVICH

发明人：ABRAMOV VLADIMIR SEMENOVICH;SOSHCHIN NAUM PETROVICH;SUSHKOV VALERIY PETROVICH;SHCHERBAKOV NIKOLAY VALENTINOVICH;ALENKOV VLADIMIR VLADIMIROVICH;SAKHAROV SERGEI ALEKSANDROVICH;GORBYLEV VLADIMIR ALEKSANDROVICH

分类号：C30B25/18;H01L33/04;C30B29/38;H01L33/00;H01L33/32

主分类号：C30B25/18

摘要：A method of growing semiconductor hetero-structures based on a gallium nitride is provided to reduce a defect density and a mechanical stress by performing the weather deposition step of one or multiple hetero-structure layers. A gallium nitride group semiconductor hetero-structure growth process comprises a weather deposition step of one expressed as the general equation AlxGa1-xN(0<x<=1) or multiple hetero-structure layers. In the A3N structure growth step using - langasite(La3Ga5SiO14) substrate is used in order to reduce the defect density and mechanical stress. The La3-x-yCexPryGa5SiO 14(x=0.1/3%, y=0.01/1%) langasite substrate(1) is used as the substrate growing the A3N structure. The substrate is transformed to the yellow fluorescence with a part of the dark blue emission of the hetero-structure.