RECRYSTALLIZATION OF SEMICONDUCTOR WAFERS IN A THIN FILM CAPSULE AND RELATED PROCESSES,申请号WO2008US08030-传众专利搜索

RECRYSTALLIZATION OF SEMICONDUCTOR WAFERS IN A THIN FILM CAPSULE AND RELATED PROCESSES

申请公布号：WO2009002550(A1)

申请号：WO2008US08030

申请日期：2008.06.26

申请公布日期：2008.12.31

申请人：

MASSACHUSETTS INSTITUTE OF TECHNOLOGY;SACHS, EMANUEL, M.;SERDY, JAMES, G.;HANTSOO, EERIK, T.

发明人：SACHS, EMANUEL, M.;SERDY, JAMES, G.;HANTSOO, EERIK, T.

分类号：H01L21/00

主分类号：H01L21/00

摘要：<p>An original wafer, typically silicon, has the form of a desired end PV wafer. The original may be made by rapid solidification or CVD. It has small grains. It is encapsulated in a clean thin film, which contains and protects the silicon when recrystallized to create a larger grain structure. The capsule can be made by heating a wafer in the presence of oxygen, or steam, resulting in silicon dioxide on the outer surface, typically 1-2 microns. Further heating creates a molten zone in space, through which the wafer travels, resulting in recrystallization with a larger grain size. The capsule contains the molten material during recrystallization, and protects against impurities. Recrystallization may be in air. Thermal transfer through backing plates minimizes stresses and defects. After recrystallization, the capsule is removed.</p>