一种可重写无机薄膜电存储器件及其制备方法
申请公布号:CN101290970A
申请号:CN200810038577.6
申请日期:2008.06.05
申请公布日期:2008.10.22
发明人:徐伟;季欣;霍钟祺
分类号:H01L45/00(2006.01);H01L27/24(2006.01);H01L21/82(2006.01);G11C11/56(2006.01);G11C16/02(2006.01)
主分类号:H01L45/00(2006.01)
代理人:陆飞;盛志范
地址:200433上海市邯郸路220号
摘要:本发明属于微电子器件和功能无机薄膜技术领域,具体涉及一种可重写的无机薄膜电存储器件及其制备方法。器件的结构为:铜-无机功能介质层-铝结构,二端的金属层做电极。中间的无机功能介质层是由硫氰酸盐水溶液和铜底电极表面反应而获得的络合物薄膜。本发明采用化学工艺学方法,利用金属固体和溶液进行的界面化学反应来制作薄膜器件中的功能介质层。采用本发明方法制备的薄膜器件具有非常稳定的可逆电双稳特性,高阻态和低阻态的阻值比为10<SUP>3</SUP>~10<SUP>5</SUP>,“写-读-擦-读”循环可达到数千次以上。本发明提出的可重写无机薄膜器件,其结构和制作工艺简单,有实际应用价值。
主权项:1、一种可重写无机薄膜电存储器件,其特征在于器件的结构为铜底电极层-无机介质层-铝顶电极层结构,中间的无机介质层是采用化学工艺学方法,由硫氰酸盐水溶液与铜底电极表面反应而获得的络合物薄膜。
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