PHOTOSENSOR, METHOD OF READING PHOTOSENSOR, MATRIX TYPE PHOTOSENSOR CIRCUIT, AND ELECTRONIC APPARATUS,申请号JP20080063757-传众专利搜索

PHOTOSENSOR, METHOD OF READING PHOTOSENSOR, MATRIX TYPE PHOTOSENSOR CIRCUIT, AND ELECTRONIC APPARATUS

申请公布号：JP2008205480(A)

申请号：JP20080063757

申请日期：2008.03.13

申请公布日期：2008.09.04

申请人：

SEIKO EPSON CORP

发明人：OZAWA NORIO

分类号：H01L31/10;H01L21/336;H01L27/146;H01L29/786

主分类号：H01L31/10

摘要：PROBLEM TO BE SOLVED: To reduce an effect of parasitic capacitance of a switching transistor to obtain a value reflecting an output of light receiving element more precisely. SOLUTION: A cell circuit 100 provided at an intersection of a scanning line 131 and a reading line 121 has a photodiode 112 in which a flowing current changes depending on an incident light amount, and a TFT 114 whose gate is connected to a cathode of the photodiode 112, whose source is connected to the scanning line 131, and whose drain is connected to the reading line 121. In an initialization period in which the scanning line 131 is selected, the photodiode 112 is biased in the forward direction to initialize the gate of the TFT 114 to a predetermined voltage. COPYRIGHT: (C)2008,JPO&INPIT