MULTI-BIT ELECTRO-MECHANICAL MEMORY DEVICE AND METHOD MANUFACTURING THE SAME,申请号KR20070050346-传众专利搜索

MULTI-BIT ELECTRO-MECHANICAL MEMORY DEVICE AND METHOD MANUFACTURING THE SAME

申请公布号：KR20080103264(A)

申请号：KR20070050346

申请日期：2007.05.23

申请公布日期：2008.11.27

申请人：

SAMSUNG ELECTRONICS CO., LTD.

发明人：LEE, JI MYOUNG;KIM, MIN SANG;YUN, EUN JUNG;LEE, SUNG YOUNG;CHOI, IN HYUK

分类号：H01L27/115

主分类号：H01L27/115

摘要：<p>A multi-bit electromechanical memory device and a manufacturing method thereof are provided to increase the integration degree of the memory device by minimizing the length of the cantilever electrode which is the switching element. A multi-bit electromechanical memory device comprises the substrate(10); the bit line formed on the top of the substrate into the first direction; the first interlayer insulating film(22) formed on the bit line; the first and the second lower part word line(30,40) formed into the second direction crossing the first direction; the spacer(24) reclaiming the both side walls of the first and the second lower part word lines; the pad electrode(52) formed within the contact hole from which the first interlayer insulating film is removed; the first and second cantilever electrodes(50) bent into the third direction perpendicular to the first and second direction; the second inter metal dielectric formed on upper part of the pad electrode; the first and the second trap site(80) supported in the second inter metal dielectric; the first and the second top word line formed on the first and the second trap site.</p>