Semiconductor device and manufacturing method thereof, and gate electrode and manufacturing method thereof,申请号US20040022987-传众专利搜索

Semiconductor device and manufacturing method thereof, and gate electrode and manufacturing method thereof

申请公布号：US7220628(B2)

申请号：US20040022987

申请日期：2004.12.28

申请公布日期：2007.05.22

申请人：

FUJITSU LIMITED

发明人：KON JUNICHI;NOZAKI KOJI;MAKIYAMA KOZO;OHKI TOSHIHIRO

分类号：H01L21/338

主分类号：H01L21/338

摘要：A method for manufacturing a semiconductor device includes a step of forming a layer where a gate electrode aperture is to be formed including at least one ultraviolet resist layer on the surface where a gate electrode is to be formed, and forming a gate electrode aperture in the layer where a gate electrode aperture is to be formed; a step of forming a layer where an over-gate is to be formed in which an over-gate part of a gate electrode is to be formed, on the layer where a gate electrode aperture is to be formed; a step of reducing the width of the gate electrode aperture; and a step of forming the gate electrode in the gate electrode aperture. The method makes it possible to efficiently produce a fine gate electrode by thickening the gate electrode aperture and reducing the width of the gate electrode aperture.