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Non-volatile memory cells
申请公布号：US7199425(B2)
申请号：US20040770579
申请日期：2004.02.04
申请公布日期：2007.04.03
分类号：H01L29/788;H01L21/8247;H01L27/115;H01L29/423;H01L29/792
主分类号：H01L29/788
摘要：A semiconductor device comprises a semiconductor substrate, and a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising a tunnel insulating film provided on the semiconductor substrate, a floating gate electrode provided on the tunnel insulating film, the width of the floating gate electrode changing in the height direction of the non-volatile memory cell in channel width or length direction there, and being thinnest between a region above the bottom surface of the floating gate electrode and a region below the upper surface thereof, a control gate electrode above the floating gate electrode, and an interelectrode insulating film provided between the control gate electrode and the floating gate electrode.
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