SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

申请公布号：JP2007012648(A)

申请号：JP20050187575

申请日期：2005.06.28

申请公布日期：2007.01.18

申请人：

ROHM CO LTD

发明人：YANO YUJI

分类号：H01L27/06;H01L21/822;H01L21/8238;H01L27/04;H01L27/092;H01L29/74

主分类号：H01L27/06

摘要：PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device capable of improving ESD (electrostatic discharge) breakdown voltage efficiency per unit area, irrespective of variations in wiring resistance. SOLUTION: In this semiconductor integrated circuit device, a p-type semiconductor region 3 to be an anode of SCR has a configuration in which silicifying processing is blocked thereon, other than a contact region 3s to which a plurality of conduction paths 10a-10d to an anode electrode 9 are connected. COPYRIGHT: (C)2007,JPO&INPIT

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