GAN-BASED LIGHT EMITTING DIODE USING THE P-TYPE OHMIC METAL FORMATTING ON TUNNELING LAYER
申请公布号:KR100618288(B1)
申请号:KR20050023092
申请日期:2005.03.21
申请公布日期:2006.08.24
发明人:KIM, SEONG JIN;KIM, CHANG YEN;CHOI, YONG SEOK;HAN, YOUNG HEON;OH, DONG JU;YU, SOON JAE
分类号:H01L33/14
主分类号:H01L33/14
STRUCTURE OF SACRIFICIAL ELECTRODE FOR CORROSION PREVENTION
MANUFACTURE OF HIGH-PURITY CARBON DIOXIDE
METHOD OF STARTING AUXILIARY AIR COMPRESSOR FOR ELECTRIC ROLLING STOCK
MANUFACTURE OF SILVER OXIDE BATTERY
MANUFACTURE OF LEAD STORAGE BATTERY
SETTING STRUCTURE OF AIR CLEANER FOR V-TYPE ENGINE OF MOTORCYCLE
COMBUSTION CHAMBER FOR DIRECT IGNITION TYPE INTERNAL- COMBUSTION ENGINE
METHOD FOR CONTROLLING COOLING RATE OF METALLIC STRIP AND COOLING ROLL
DIGITAL POSITIONAL SIGNAL DETECTING SYSTEM
CENTRALIZED OPTICAL DISK DEVICE
METHOD OF AND APPARATUS AND MACHINE FOR APPLYING TAPE TO A MOULD