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GAN-BASED LIGHT EMITTING DIODE USING THE P-TYPE OHMIC METAL FORMATTING ON TUNNELING LAYER

申请公布号:KR100618288(B1)

申请号:KR20050023092

申请日期:2005.03.21

申请公布日期:2006.08.24

申请人:
ITSWELL CO., LTD.

发明人:KIM, SEONG JIN;KIM, CHANG YEN;CHOI, YONG SEOK;HAN, YOUNG HEON;OH, DONG JU;YU, SOON JAE

分类号:H01L33/14

主分类号:H01L33/14

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