CMOS image sensor and method for fabricating the same

申请公布号：US2006138578(A1)

申请号：US20050318445

申请日期：2005.12.28

申请公布日期：2006.06.29

申请人：

LIM KEUN H

发明人：LIM KEUN H.

分类号：H01L31/0232

主分类号：H01L31/0232

摘要：A CMOS image sensor and a method for fabricating the same in which characteristics of the image sensor are not affected even if a profile of microlenses is varied, so as to obtain a more reliable device. The CMOS image sensor of the present invention includes color filter layers formed over a semiconductor substrate, a planarization layer formed on the color filter layers, and microlenses formed of the same material as that of the planarization layer on the planarization layer, the microlenses positioned to correspond to the color filter layers respectively.

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