Transistor, method of manufacturing transistor, and method of operating transistor,申请号US20050274475-传众专利搜索

Transistor, method of manufacturing transistor, and method of operating transistor

申请公布号：US2006108639(A1)

申请号：US20050274475

申请日期：2005.11.16

申请公布日期：2006.05.25

申请人：

CHO CHOONG-RAE;YOO IN-KYEONG;LEE MYOUNG-JAE

发明人：CHO CHOONG-RAE;YOO IN-KYEONG;LEE MYOUNG-JAE

分类号：H01L29/94;H01L29/76

主分类号：H01L29/94

摘要：A transistor in which a physical property of its channel is changed according to an applied voltage, and methods of manufacturing and operating the same are provided. The transistor may include a first conductive layer on a substrate, a phase change layer and a second conductive layer which are sequentially stacked on the first conductive layer, a first current direction limiting unit and a second current direction limiting unit formed on the second conductive layer by being separated within a space, a third conductive layer and a fourth conductive layer formed on the first current direction limiting unit and the second current direction limiting unit, respectively, a word line connected to the third conductive layer, a bit line connected to the fourth conductive layer, and a voltage lowering unit connected to the word line.