ELEMENT FOR LASER VOLTAGE PROBE MEASUREMENT, AND METHOD FOR MEASURING POTENTIAL WAVEFORM IN SEMICONDUCTOR INTEGRATED CIRCUIT USING IT,申请号JP20040323459-传众专利搜索

ELEMENT FOR LASER VOLTAGE PROBE MEASUREMENT, AND METHOD FOR MEASURING POTENTIAL WAVEFORM IN SEMICONDUCTOR INTEGRATED CIRCUIT USING IT

申请公布号：JP2006133112(A)

申请号：JP20040323459

申请日期：2004.11.08

申请公布日期：2006.05.25

申请人：

NEC ELECTRONICS CORP

发明人：NONAKA JUNPEI

分类号：G01R31/302;G01N21/27

主分类号：G01R31/302

摘要：PROBLEM TO BE SOLVED: To provide a method and device for facilitating measurement of potential waveform by a laser voltage probe by enabling response to reduction in amplitude of signal voltage and contraction of element size. SOLUTION: In the method for measuring potential waveform by connecting an observation object area of the potential waveform is connected to the LVP (laser voltage probe) measuring element 101 to perform LVP measurement with the LVP measuring element 101 as a laser irradiating position, the LVP measuring element 101 has a MOS capacitor structure, in which the potential waveform of an observation area is applied to a drain diffusion area 103 and a source diffusion area 105, and the potential waveform of reverse logic to the observation area is applied to a gate 107. The band gap of a channel surface A-A' of the element 101 is changed as 121 and 123 in accordance with the logic transition of the observation area, whereby the aspect of change of light absorptivity by generation of Franz-Keldysh effect is observed by LVP measurement. COPYRIGHT: (C)2006,JPO&NCIPI