METHOD OF MANUFACTURING METAL ELECTRODE OF SEMICONDUCTOR

申请公布号：KR940008565(B1)

申请号：KR19910007009

申请日期：1991.04.30

申请公布日期：1994.09.24

申请人：

SAMSUNG ELECTRONICS CO., LTD.

发明人：BAE, BYONG - SONG;SON, JONG - HA

分类号：H01L21/28;(IPC1-7):H01L29/44

主分类号：H01L21/28

摘要：The method improves the step coverage of the later deposited layer by making the isolated layer flat. The method comprises the steps of: (A) depositing metal with thickness of d1 on an isolating substrate (1) and forming the first metal layer (11) after patterning; (B) forming the second metal layer (12) with d2 thickness on the first metal layer; (C) anodic oxidizing the second metal layer (12) except the bottom of photoresist (13).

PRODUCTION OF SEMICONDUCTOR DEVICE

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CIRCUIT MONITORING SYSTEM

TRANSCEIVER

COLLISION PREVENTIVE SYSTEM

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